C. Kern, M. Kadic, and M. Wegener

Phys. Rev. Lett. 118, 016601 (2017)

Abstract:

Effectively inverting the sign of material parameters is a striking possibility arising from the concept of metamaterials. Here, we show that the electrical properties of a p-type semiconductor can be mimicked by a metamaterial solely made of an n-type semiconductor. By fabricating and characterizing three-dimensional simple-cubic microlattices composed of interlocked hollow semiconducting tori, we demonstrate that sign and magnitude of the effective metamaterial Hall coefficient can be adjusted via a tori separation parameter—in agreement with previous theoretical and numerical predictions.